Exploring Quantum Tunneling
ثبت نشده
چکیده
To begin this activity we will explore the properties of the wave function for an electron in a simple potential energy situation. Start the Quantum Tunneling program. Go to File/ Open in the top pull-down menu and open the file Step.txt. The top half of the program screen displays a potential energy diagram similar to the one in Figure 1. This potential energy diagram is very similar to the one for an electron in a TV picture tube as it approaches the TV screen.
منابع مشابه
QUANTUM TUNNELING IN MEDIUMS WITH LINEAR AND NONLINEAR DISSIPATION
We have applied the method of integration of the Heisenberg equation of motion proposed by Bender and Dunne, and M. Kamella and M. Razavy to the potential V(q) = v q - µ q with linear and nonlinear dissipation. We concentrate our calculations on the evolution of basis set of Weyl Ordered Operators and calculate the mean position , velocity , the commutation relation [q, p], and the energ...
متن کاملThe Effect of Structural Parameters on the Electronic States and Oscillator Strength of a Resonant Tunneling Quantum Well Infrared Photodetector
In this paper a resonant tunnelling quantum well infrared photodetector (RT-QWIP) is discussed. Each period of this photodetector structure comprises of a resonant tunnelling structure (AlAs/AlGaAs/AlAs) nearby a quantum well (AlGaAs/GaAs). In this photodetector, photocurrent is produced when an electron makes a transition from the ground state of the well to an excited state which is coupled t...
متن کاملExploring the fractional quantum Hall effect with electron tunneling
In this talk I present a summary of recent work on tunnel junctions of a fractional quantum Hall fluid and an electron reservoir, a Fermi liquid. I consider first the case of a single point contact. This is a an exactly solvable problem from which much can be learned. I also discuss in some detail how these solvable junction problems can be used to understand many aspects of the recent electron...
متن کاملImpact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...
متن کاملModeling and Simulation of a Molecular Single-Electron Transistor
In this paper, to understand the concept of coupling, molecule density of states that coupled to the metal electrodes will be explained then, based on this concept, a weak and strong coupling for the molecules attached to the metal electrodes will be described. Capacitance model is used to explore the connection of addition energy with the Electron affinity and the ionization energy of the mole...
متن کامل